posted 06-05-2002 10:57 PM               

quote:

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and I assume

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posted 06-05-2002 11:54 PM            

quote:

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Lulu, it seems to me that TPTB donÂ’t seem to care that you are trumpeting around their Most Secret Thingie of all time? Why do you suppose that is?

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Duncan,

Nobody said that this was the most secret thing in all time. Yes, it is still considered classified by the government. However, let this be an indication to you of the technology that existed a decade (or even two) ago. Now consider the technology that is possible today. Unconceivable, isn't it? This doesn't mean it's not real.

Although it's still classified, the government has become less scrupulous and less concerned with 'silencing tactics', as most educated individuals and scientists realize that this technology is now possible and plausible. I assure you that there was nothing about this on the internet during the times the AURORA project was active (even though the internet was not technically existent then, but was more commonly referred to as ARPANET). It has been concluded for some time now. We can only wonder what they are up to now.

The TR-3B is a late model, reverse engineered version of the TR-3A Manta. There have been numerous prototype models built that employ the flat, triangular, singular wing shape. If you would do the faintest bit of research on dreamland you would realize this. Also, I have a number of documents outlining much of the research projects of the ONR, including the institution or organization that has been awarded the research (i.e. Stanford, UCSC, et..), the names of the Assigned ONR officer, the award number, along with a brief technical description of the objectives of the research. It's all relative and correlates with EM (electromagnetics) and the physical application of such, as seen with most of these technologies that 'educated individuals' and 'scientists' are aware of.

The point is, Duncan, you're either oblivious, or simply in denial. Also it's amusing how you resort to defamation behind my back with your ignorant minions on your debunker board. What an infantile. At least have the marbles to step up like a man; of course, you know if you do that you will be 'dispositioned' accordingly. ROFL. weak.
Also, "toxdoc", I never referrenced the "kok" bible in any way. It's most likely just your lack of comprehension or understanding that would lead you to claim this. Why don't you post the particular comments you were referring to, eh?? ROFL.
Additionaly, "jayrenolds" :
Although I have been trained in controling my brainwaves, and even own an EEG, I do not embrace 'scientology' or the concept of 'auditing'.

Antagonism and Defamation =
Duncan Koonz and the_ kool aid clique
duncankunz@cox.net
Mesa AZ / 480-891-2525
Antagonist and Infantile Extraordinaire
Web Page Coming Soon!

Here is just a minute bit of the ONR programs... there are thousands more just like these.

Title: THz-Bandwidth, Deep Submicron, Regrown-Base
Transfer-Substrate HBTs

PI: Mark Rodwell
THE REGENTS OF THE UNIVERSITY OF
CALIFORNIA SANTA BARBARA
Department of Electrical and Computer
Engineering
Address: CHEADLE HALL RM 3227
Santa Barbara, CA 93106
(805) 893-3244
Funding Agency: Office of Naval Research
PR Number: 00PR00014-00
Award Number: N000149910041
Current End Date: 30-Sep-2001
Scientific Officer: John Zolper

Objective:
A low parasitic heterostructure bipolar transistor (LP-HBT) will be scaled down to an emitter width of 0.1 microns to achieve the first THz
transistor.
Approach:
A transfer substrate flip wafer process is being developed for a low
parasitic heterojunction bipolar transistor (LP-HBT) whereby the n-type
semiconductor under the p-type base contact region is removed to
dramatically reduce the base-collector capacitance. The structure will
be scaled down to a 0.1 micron emitter width that should produce the
first THz transistor. The work will employ an InP collector to improve the breakdown properties over previous devices.
Progress:
This program seeks to develop very high speed transistors (HBTs) using
a transferred-substrate technique. By scaling the devices to very
small dimensions, HBTs have been produced with power-gain cutoff
frequencies as high as 1080 GHz, 3.5:1 higher than any other HBT and
1.8:1 higher than any other kind of transistor. Efforts to obtain high
current-gain cutoff frequencies have resulted in a record 254 GHz ft,
and a number of wafers have been processed with the recent goal of
obtaining much higher ft.

Title: Piezoelectric Doping for GaN Heterojunction
Bipolar Transistors
PI: Peter Asbeck
THE REGENTS OF THE UNIVERSITY OF
CALIFORNIA SAN DIEGO 0934
Department of Electrical Engineering
Address: 9500 GILMAN DRIVE
La Jolla, CA 920930407
(619) 534-6713
Funding Agency: Office of Naval Research
PR Number: 00PR00026-00
Award Number: N000149810539
Current End Date: 31-Mar-2001
Scientific Officer: John Zolper

Objective:
Use strong piezoelectric effect in AlGaN/GaN layers grown in SiC to
achieve enhanced hole densities and thereby produce high power
heterostructure bipolar transistors in this material system.
Approach:
Holes densites on the order of 2e18 cm-3 will be generated in the
base of a AlGaN/GaN collector-up HBT grown on SiC. This will be
accomplished by growing a graded AlGaN layer in the base of the
transistor. The hole enhancement will first be studied in diode test
structures prior to complete HBT fabrication. Complete collector-up
HBTs will be fabricated and characterized at dc and microwave
frequencies. Following successful demonstration of the collector-up
HBT, novel designs will be implemented to reduce extrinsic emitter
injection either by ion implantation or selective area lateral
epitaxial overgrowth.
Progress:
Preliminary designs of the HBT has been developed. Material
structures have been specified and are ready for growth at partnering
institutions. Simulation studies of the hole concentration expected in
the base layer have been carried out based on the piezoelectric effect
and the incorporation of Mg acceptors. Stress relaxation in 3
dimensions has been studied in a finite element simulation, to
determine if the piezoelectric charge will be significantly modified at the edges of the devices. For the collector-up device, current confinement in the intrinsic emitter was studied. It was found that it is critical to minimize current spreading in the extrinsic emitter region. A novel structure for improvement in base contacts based on piezoelectric doping has been devised, and structures for potential implementation of the concept have been designed. Acceptor-like doping from spontaneous and piezoelectric polarization in AlGaN/GaN HBT
structures was theoretically evaluated. Experimental samples to
measure this doping (together with that from modulation doping using
Mg) were designed. After epitaxial growth at NCSU (Prof. R. Davis), the
samples were measured. Results confirm doping contributions of the
magnitude expected. Structures with n-type base regions (hot electron
transistors) have also been designed and are being fabricated.

Title: Materials Physics & Electron Transport
Issues in Superconducting Electronics
PI: Robert Buhrman
CORNELL UNIVERSITY
School of Applied & Engineering Physics
Address: 120 DAY HALL
ITHACA, NY 14853
(607) 255-3732
Funding Agency: Office of Naval Research
PR Number: 00PR00092-01
Award Number: N000149710142
Current End Date: 31-Oct-2002
Scientific Officer: Deborah Van Vechten

Objective:
To provide output from the PI's previous efforts regarding the cause and
remedies of inhomogeneous oxygen distribution in YBCO to applications
such as high performance HTS filters, high current density (Jc)
conductors, and HTS Josephson junctions wherein such inhomogenities
may deleteriously impact performance. Improved ability to apply HTS
materials to Navy problems should result.
Approach:
To collaborate with several other groups. Whether the 5-10x
improvement following ozone treatment of the Jc of large angle grain
boundaries is reproduced in the predominantly small angle case of IBAD
textured tape will be tested in conjunction with 3M and Stanford. The
impact of the same treatment on microwave surface loss and IP3 will be
tested at NIST. Details of the effect of ion beams on the surface of YBCO will be studied to look for both surface passivation coatings and
improved uniformity junction tunnel barriers. A small effort will look at normal metal barriers for NbN based junctions in order that we have a
self-shunted option for this higher temperature digital material.
Progress:
Inhomogeneous oxygenation produces variation in the superconducting properties of HTS materials and, if the material is used as a barrier in a Josephson junction structure, to non-reproducible tunneling characteristics. It is thus significant that doping, as with Co in
the most common barrier material, produces local stress fields that
reduce the oxygen binding energy and lead to inhomogeneous
concentrations. As a result only ozone annealing can produce full
oxygenation. When done to grain boundary and engineered interface
junctions, a Jc independent IcRn product results, a strong virtue. This
understanding should assist the development of improved HTS JJ. A
modified Blonder-Tinkham-Klapwijk model has been successfully used
to directly measure the interface scattering and spin polarization of
electrons traversing a clean ferromagnetic-superconductor interface.

Title: PLASMA WAVE ELECTRONICS DEVICE UTILIZING
TWO-DIMENSIONAL ELECTRON FLUID
PI: Michael Shur
RENSSELAER POLYTECHNIC INSTITUTE
Address: Thornton Hall
Charlottesville, VA 22903
(804) 942-4270
Funding Agency: Office of Naval Research
PR Number: 00PR00187-00
Award Number: N000149810210
Current End Date: 04-Jan-2001
Scientific Officer: John Zolper

Objective:
Develop theory and experimentally demonstrate the application of
the plasma wave properties of the two dimensional electron gas in high
mobility transistors as a high frequency detector.
Approach:
The non-linear theory will be developed for an arbitary load, for wide
bandgap semiconductors, for detectivity, and for the analysis of detector arrays. The experimental work will involve the design, fabrication, and characterization of non-resonant and resonant detectors, and for detector arrays.
Progress:
Investigations were performed on microwave GaN-based HEMT detectors
and, for the first time, terahertz GaAs-based HEMT detectors. Both
types of transistors operated at frequencies much higher than their
cutoff frequency. The gate voltage dependence is in good agreement
with the theory developed under the program. Polarization
dependencies were discovered. The measured temperature dependence
of the detector responsivity suggests a high viscosity of the electronic
fluid. A new theory was developed that predicts the dynamic range of
the terahertz HEMT detector.In the past year, we demonstrated
experimentally the first terahertz (2.5 THz) detector utilizing an
AlGaAs/GaAs High Electron Mobility Transistor (HEMT). The bias
dependence of the measured detector responsivity is in agreement with
the analytical detector theory. Also, this detector is sensitive to the
polarization of the terahertz radiation. We have performed modeling and
characterization of 0.25 micron GaN-based HEMTs including the noise
characteristics and the electron mobility since high-mobility samples are required for GaN terahertz detector fabrication. Theoretically, we have studied the detector large signal theory and the nonlinear detector
theory for an arbitrary load. We have also studied the influence of
scattering of carriers on the "shallow water wave instability" of the
surface plasma waves in a HEMT.

Title: Broadband Microwave Traveling Wave Power
Amplifiers
PI: Kevin Webb
PURDUE RESEARCH FOUNDATION
Department of Electrical Engineering
Address: Hovde Hall, 3rd Floor
West Lafayette, IN 47907
(317) 494-3373
Funding Agency: Office of Naval Research
PR Number: 00PR00192-00
Award Number: N000149810371
Current End Date: 30-Sep-1999
Scientific Officer: John Zolper

Objective:
To design and fabricate high power traveling wave amplifier circuits
using AlGaN/GaN transistors developed under the Cornell MURI. The
proposal is configured to parallel the MURI in time frame and option
structure.
Approach:
To perform detailed characterization of high power transistors developed under the Cornell MURI and to develop nonlinear models for these devices. These device models will then be used to design high power traveling wave amplifiers. Said amplifiers will be fabricated and tested under this contract.
Progress:
In collaboration with Prof. Eastman, et al., from Cornell, the PI has
designed high efficiency Class A traveling wave and distributed (compact) monolithic GaN HEMT amplifiers that have no drain line
dummy termination. These designs used a nonlinear HEMT model
derived from measured data. Forthcoming experimental data is expected
to support the design concept, which can then be transferred to a Class B push-pull design. Prior to achieving these designs, investigatations will be performed of fundamental issues related to broadband amplifiers and device models, including stability, matched terminations, drain and gate line matching, the basis and accuracy of the HEMT model, and physical implementation strategies. Fabrication of these amplifiers is underway at Cornell.

Title: Ultra-Linear Dynamically Programmable
Analog to Digital Converter
PI: Oleg Mukhanov
HYPRES INC
Address: 175 CLEARBROOK ROAD
ELMSFORD, NY 10523
(914) 592-1190
Funding Agency: Office of Naval Research
PR Number: 00PR00211-02
Award Number: N0001499C0089
Current End Date: 30-Dec-2000
Scientific Officer: Deborah Van Vechten

Objective:
Seek a dynamically programmable analog to digital converter wherein
the performance may be programmed from 19 effective bits of resolution
with 116 dB spur-free-dynamic-range (SFDR) at 20 MHz sampling speed
to 9 effective bits resolution with a 70 dB SFDR at 2 GS/s.
Approach:
Low transition temperature superconductors, in particular Nb, will be
used to fabricate the circuits using Rapid Single Flux Quantum (SFQ)
logic. All demonstrations to be done using liquid He cooling. A high-speed single bit quantizer will produce quantized pulses at a rate
dependent on the input signal current. The time at which these pulses
arrive at the synchronizer is resolved and determines the digital data
stream. Both on-chip superconductive decimation and ratio programmable room temperature decimation will be used to vary the sample speed and accuracy of the final samples. The work will increase the number of synchronizer elements and thus timing accuracy within a clock cycle and increase the clock speed of the current design. Perfection of chemical mechanical polishing, improved lithographic resolution of devices, and an increase in the speed of the interface to room temperature circuits is required for success.
Progress:
A complete 20 GHz ADC design was finished, including a new front-end
and a new digital filter. The circuit showed 20 GHz operation of the
separate ADC sections after the first design iteration, substantially
higher than the previous maximum of 13 GHz. A 25 GHz digital filter
design was completed and operated properly in a four-bit
implementation in the standard 3-um process. Room temperature
interface and decimination filtering components were successfully
tested up to 1 GS/s. Operation to 240 GHz was demonstrated in a toggle
flip-flop fabricated using SUNY's 1.5-um process. The in-house 1.5-um
process has demonstrated high-Jc 100 shunted-JJ arrays and the
conversion of digital cell library to this new process has begun.